IRFR5305TRPBF vs IRF5305STRRPBF Vergleich
Detaillierter Direktvergleich von IRFR5305TRPBF von Infineon und IRF5305STRRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR5305TRPBF | IRF5305STRRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $0,62 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) Max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | 31 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 110 W | — |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | — |
| Betriebstemperaturbereich | -55 C to +175 C | — |
| Gehäuse | TO-252AA (DPAK) | D2PAK (TO-263) Surface Mount |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (Advanced Process) |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant (Pb-free PBF suffix) | — |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Transistortyp | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC | — | -31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max @ VGS=-10V | — | 60 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Power Dissipation (TC) | — | 110 W |
| Power Dissipation (TA) | — | 3.8 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (Pb-free suffix) |
| Packaging | — | Tape & Reel (TR) |