IRFR5410TRPBF vs IRLTS2242TRPBF Vergleich
Detaillierter Direktvergleich von IRFR5410TRPBF von Infineon und IRLTS2242TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR5410TRPBF | IRLTS2242TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,14 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -20 V |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| Gehäuse | TO-252AA (DPAK), surface mount | TSOP-6 (Micro 6) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| Betriebstemperaturbereich | -55 °C to +150 °C (TJ) | -55C to +150C (junction) |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | IR MOSFET (HEXFET) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | MSL1 (per JEDEC J-STD-020) |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| Continuous Drain Current (ID) at TA=25C | — | -6.9 A |
| Power Dissipation (PD) at TA=25C | — | 2.0 W |
| On-Resistance RDS(on) max at VGS=-10V | — | 32 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS absolute max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Gate Drive Voltage (logic level) | — | 4.5 V (fully enhanced), 2.5 V capable |
| Package Thermal Resistance (RthJA) | — | [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes |