IRFR5410TRPBF vs IRLTS2242TRPBF Comparison

Detailed side-by-side comparison of IRFR5410TRPBF by Infineon and IRLTS2242TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLTS2242TRPBF IRLTS2242TRPBF - 20V P-Ch HEXFET MOSFET, TSOP-6 | Infineon

IRLTS2242TRPBF - 20V P-Ch HEXFET MOSFET, TSOP-6 | Infineon

IRLTS2242TRPBF βœ“ Active

Specification Comparison

Parameter IRFR5410TRPBF IRLTS2242TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.71 $0.14
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -100 V -20 V
Continuous Drain Current (ID) at TC = 25 Β°C -13 A β€”
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΞ© β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Total Gate Charge (Qg) typ 70 nC β€”
Package TO-252AA (DPAK), surface mount TSOP-6 (Micro 6)
Power Dissition (PD) at TC = 25 Β°C 66 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C (TJ) -55C to +150C (junction)
Mounting Type Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) IR MOSFET (HEXFET)
Avalanche Rated Yes (fully avalanche rated) β€”
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) β€”
MSL Level [DATA_NEEDED: MSL rating] MSL1 (per JEDEC J-STD-020)
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A β€”
Continuous Drain Current (ID) at TA=25C β€” -6.9 A
Power Dissipation (PD) at TA=25C β€” 2.0 W
On-Resistance RDS(on) max at VGS=-10V β€” 32 mOhm
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS absolute max]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typ/min/max]
Gate Drive Voltage (logic level) β€” 4.5 V (fully enhanced), 2.5 V capable
Package Thermal Resistance (RthJA) β€” [DATA_NEEDED: RthJA on 1 inch FR-4 PCB]
RoHS Status β€” Compliant
Lead-Free β€” Yes
Halogen-Free β€” Yes

Datasheets & Resources

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