IRFR5410TRRPBF vs IRFR5410TRPBF Vergleich

Detaillierter Direktvergleich von IRFR5410TRRPBF von Infineon und IRFR5410TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFR5410TRRPBF IRFR5410TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,49 $0,71
Polarity P-Channel P-Channel
FET Type MOSFET (Metal Oxide Semiconductor) —
Technology HEXFET (5th Generation) HEXFET (advanced process, Gen 5)
VDS (Drain-Source Voltage) -100 V —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Gate Threshold) -2 V to -4 V —
Continuous Drain Current (ID) at Tc=25C -13 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at 100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max at VGS=-10V 205 mΩ —
RDS(on) typical at VGS=-10V 26 mΩ (per Mouser listing for IRFR5410TRPBF) —
Total Gate Charge (Qg) 70 nC —
Power Dissipation (Pd) at Tc=25C 66 W —
Betriebs-Sperrschichttemperatur -55C to +150C —
Gehäuse TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Montageart Surface Mount Surface Mount
Avalanche Rated Yes Yes (fully avalanche rated)
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
Drain-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TC = 25 °C — -13 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V — 205 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) typ — 70 nC
Power Dissition (PD) at TC = 25 °C — 66 W
Betriebstemperaturbereich — -55 °C to +150 °C (TJ)
Lead-Free / RoHS Status — Lead-free, RoHS compliant (PBF suffix)
MSL-Level — [DATA_NEEDED: MSL rating]
RDS(on) Test Conditions — VGS = -10 V, ID = -7.0 A

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern