IRFR5410TRRPBF vs IRFR5410TRPBF 对比
详细并排对比 IRFR5410TRRPBF 出自 Infineon 和 IRFR5410TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR5410TRRPBF | IRFR5410TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.49 | $0.71 |
| Polarity | P-Channel | P-Channel |
| FET Type | MOSFET (Metal Oxide Semiconductor) | — |
| Technology | HEXFET (5th Generation) | HEXFET (advanced process, Gen 5) |
| VDS (Drain-Source Voltage) | -100 V | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Gate Threshold) | -2 V to -4 V | — |
| Continuous Drain Current (ID) at Tc=25C | -13 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=-10V | 205 mΩ | — |
| RDS(on) typical at VGS=-10V | 26 mΩ (per Mouser listing for IRFR5410TRPBF) | — |
| Total Gate Charge (Qg) | 70 nC | — |
| Power Dissipation (Pd) at Tc=25C | 66 W | — |
| 工作结温 | -55C to +150C | — |
| 封装 | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TC = 25 °C | — | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | — | 205 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) typ | — | 70 nC |
| Power Dissition (PD) at TC = 25 °C | — | 66 W |
| 工作温度范围 | — | -55 °C to +150 °C (TJ) |
| Lead-Free / RoHS Status | — | Lead-free, RoHS compliant (PBF suffix) |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| RDS(on) Test Conditions | — | VGS = -10 V, ID = -7.0 A |