IRFR5410TRRPBF vs IRFR5410TRPBF 비교
다음의 상세 나란히 비교: IRFR5410TRRPBF 제조: Infineon 및 IRFR5410TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR5410TRRPBF | IRFR5410TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.49 | $0.71 |
| Polarity | P-Channel | P-Channel |
| FET Type | MOSFET (Metal Oxide Semiconductor) | — |
| Technology | HEXFET (5th Generation) | HEXFET (advanced process, Gen 5) |
| VDS (Drain-Source Voltage) | -100 V | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Gate Threshold) | -2 V to -4 V | — |
| Continuous Drain Current (ID) at Tc=25C | -13 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=-10V | 205 mΩ | — |
| RDS(on) typical at VGS=-10V | 26 mΩ (per Mouser listing for IRFR5410TRPBF) | — |
| Total Gate Charge (Qg) | 70 nC | — |
| Power Dissipation (Pd) at Tc=25C | 66 W | — |
| 동작 접합 온도 | -55C to +150C | — |
| 패키지 | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TC = 25 °C | — | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | — | 205 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) typ | — | 70 nC |
| Power Dissition (PD) at TC = 25 °C | — | 66 W |
| 동작 온도 범위 | — | -55 °C to +150 °C (TJ) |
| Lead-Free / RoHS Status | — | Lead-free, RoHS compliant (PBF suffix) |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |
| RDS(on) Test Conditions | — | VGS = -10 V, ID = -7.0 A |