IPT022N10NF2SATMA1 - 100V 2.2mΩ StrongIRFET 2 N-MOSFET | Infineon
Teilenummer: IPT022N10NF2SATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.71 | $1,71 |
| 10 | $1.55 | $15,50 |
| 100 | $1.32 | $132,00 |
| 500 | $1.15 | $575,00 |
| 1.000 | $0.99 | $990,00 |
IPT022N10NF2SATMA1 Übersicht
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch where a positive gate-to-source voltage creates a conductive channel between drain and source. Within the broader semiconductor taxonomy, the StrongIRFET 2 belongs to the power MOSFET family, which is itself a subclass of discrete transistors used in switched-mode power supplies (SMPS), motor drives, and high-current DC-DC conversion. The PG-HSOF package places the die on a copper-can-style lead frame that doubles as the drain tab, drastically reducing package resistance and parasitic inductance.
Key differentiating features include 2.2 mΩ typical RDS(on) at VGS=10 V, 100 V drain-source breakdown voltage (V(BR)DSS), trench-based cell architecture, and a low thermal resistance owing to the top-side exposed pad. The StrongIRFET 2 platform is optimized for low conduction loss and soft switching behavior, targeting high-frequency synchronous rectification and high-current OR-ing applications.
The device is built on Infineon's advanced trench technology, which shrinks cell pitch and increases channel density per unit area, thereby reducing both RDS(on) and gate charge (Qg) for a given silicon footprint. The low figure-of-merit (FOM = RDS(on) × Qg) directly translates to lower switching and conduction losses in hard-switched and resonant topologies, enabling higher power density designs.
Typical applications include synchronous rectification in 48 V telecom and server bus converters, high-current DC motor drives, hot-swap and OR-ing controllers, eMobility auxiliary power modules, and solar micro-inverters. The combination of 100 V rating and 2.2 mΩ RDS(on) makes this MOSFET a strong fit for 24 V/36 V industrial buses and 48 V mild-hybrid eMobility rails.
When designing with the IPT022N10NF2S, ensure gate drive voltage of 10 V is available (logic-level gate drive is not supported). Use Kelvin-source PCB layout to keep the gate drive loop inductance below 5 nH and minimize ringing at the gate. Adequate PCB copper pour is required on the source tab to sustain the 236 A pulsed current capability at Tc.
This page synthesizes distributor pricing, drop-in alternatives from both Infineon and competitor sources, and practical design notes not found in the manufacturer datasheet alone. Engineers comparing the IPT022N10NF2S against StrongIRFET 2 family members or cross-brand 100 V N-MOSFETs in the same PG-HSOF-8-10 footprint will find the structured comparison and selection guide below valuable for both design-in and sourcing decisions.
Drop-in-Alternativen für IPT022N10NF2SATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IPT022N10NF2SATMA1 (gleiche Bauform und Footprint) – abweichend in Technology, Operating Temperature Range, Package, FET Type, Drain-Source Voltage (VDS).
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IPT022N10NF2S
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BSC076N04NDATMA1
✅ Drop-In✓ Auf Lager
$0.82 / Stück
Datenblatt ansehen →IGLR70R270D2SXUMA1
✅ Drop-In✓ Auf Lager
$2.13 / Stück
Datenblatt ansehen →IAUCN08S7L033ATMA1
✅ Drop-In✓ Auf Lager
$0.86 / Stück
Datenblatt ansehen →ISC011N04NM7VATMA1
✅ Drop-In✓ Auf Lager
$0.41 / Stück
Datenblatt ansehen →IRFS4227TRLPBF
✅ Drop-In✓ Auf Lager
$2.38 / Stück
Datenblatt ansehen →IPT022N10NF2SATMA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Product Family | StrongIRFET 2 |
| FET Type | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | 100 V |
| Continuous Drain Current (Id) at Ta | 29 A |
| Continuous Drain Current (Id) at Tc | 236 A |
| Typical RDS(on) at VGS=10V | 2.2 mΩ |
| Power Dissipation at Ta | 3.8 W |
| Power Dissipation at Tc | 250 W |
| Gehäuse | PG-HSOF-8-10 (8 leads + tab) |
| Montageart | Surface Mount |
| Technology | Trench MOSFET |
| Betriebstemperaturbereich | -55C to +175C |
| RoHS-Status | Compliant |
IPT022N10NF2SATMA1 Pin-Konfiguration
| Pin 1 | S — Source |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | G — Gate |
| Pin Tab | D — Drain (top-side exposed tab) |
Sicherer Arbeitsbereich
Typische Anwendungen
IPT022N10NF2SATMA1 ist geeignet für 6 Anwendungs: 48V Server/Telecom Synchronous Rectification, eMobility 48V Mild-Hybrid Power Rails, Hot-Swap and OR-ing Controllers, Industrial 24V/36V High-Current Motor Drives, Solar Micro-Inverter and Power Optimizer, Battery Management and Protection Systems.
48V Server/Telecom Synchronous Rectification
The IPT022N10NF2SATMA1 is ideal for 48 V secondary-side synchronous rectification in telecom and server SMPS, where its 2.2 mΩ typical RDS(on) at VGS=10 V minimizes conduction loss in the high-current rectification path. The 100 V V(BR)DSS provides 100% voltage headroom above the 48 V bus while not being over-specified, and the PG-HSOF-8-10 package's top-side drain tab enables direct top-side cooling for high power density. At 50 A continuous drain current, conduction loss is approximately 5.5 W per device, enabling 1500 W+ converter designs without paralleling.
Empfohlen
eMobility 48V Mild-Hybrid Power Rails
The IPT022N10NF2SATMA1 supports 48 V mild-hybrid eMobility power rails, including DC-DC converters, auxiliary power modules, and high-current load switches. Its 2.2 mΩ RDS(on) reduces conduction loss at the 100-200 A peak currents typical of 48 V eMobility systems, and the 100 V rating provides margin for inductive switching transients. The PG-HSOF-8-10 package's 250 W power dissipation at Tc supports high continuous current in the confined under-hood environment.
Empfohlen
Hot-Swap and OR-ing Controllers
The IPT022N10NF2SATMA1 is well-suited for 48 V hot-swap and OR-ing controllers in redundant power systems, where its 2.2 mΩ RDS(on) minimizes voltage drop in the conduction path and its 100 V V(BR)DSS provides margin for transient voltage events during hot-swap insertion. The PG-HSOF-8-10 package's large source pad enables Kelvin-source PCB layout, which is critical for accurate current sensing in OR-ing FET applications. At 50 A continuous, the device dissipates only 5.5 W, simplifying thermal design.
Empfohlen
Industrial 24V/36V High-Current Motor Drives
The IPT022N10NF2SATMA1 serves as a low-side or high-side switch in industrial 24 V/36 V motor drive applications, including brushless DC (BLDC) motor inverters and stepper motor drivers. Its 236 A pulsed current capability at Tc supports the high inrush currents of motor startup, and the 100 V V(BR)DSS provides 3x safety margin above the 36 V bus. The PG-HSOF-8-10 package's 250 W power dissipation at Tc enables compact designs without external heatsinks at moderate PWM duty cycles.
Empfohlen
Solar Micro-Inverter and Power Optimizer
The IPT022N10NF2SATMA1 is used in solar micro-inverter and power optimizer applications, where its 100 V V(BR)DSS supports residential solar panel strings up to approximately 60 V open-circuit voltage, and its 2.2 mΩ RDS(on) minimizes conduction loss in the high-frequency switching path. The PG-HSOF-8-10 package's top-side drain tab allows direct PCB thermal via or heatsink attachment, enabling compact IP67-rated outdoor enclosures.
Empfohlen
Battery Management and Protection Systems
The IPT022N10NF2SATMA1 functions as a low-side protection switch in battery management systems (BMS) for 48 V battery packs, where its 2.2 mΩ RDS(on) minimizes voltage drop in the discharge path and its 100 V V(BR)DSS provides margin for inductive transients. The PG-HSOF-8-10 package enables 100+ A continuous discharge current with proper PCB layout, and the low RDS(on) reduces heat generation during high-current events.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IPT022N10NF2SATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IPT022N10NF2S | BSC076N04NDATMA1 | IGLR70R270D2SXUMA1 | IAUCN08S7L033ATMA1 | ISC011N04NM7VATMA1 | IRFS4227TRLPBF |
|---|---|---|---|---|---|---|---|
| Package | PG-HSOF-8-10 | PG-HSOF-8-10 - same | PG-HSOF-8-10 - same | PG-HSOF-8-10 - same | PG-HSOF-8-10 - same | PG-HSOF-8-10 - same | PG-HSOF-8-10 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| V(BR)DSS (Drain-Source Breakdown) | 100 V | 100 V | 40 V | 700 V | 80 V | 40 V | 200 V |
| Typical RDS(on) at VGS=10V | 2.2 mΩ | 2.2 mΩ | 7.6 mΩ | 270 mΩ | 3.3 mΩ | 1.1 mΩ | 13 mΩ |
| Continuous Drain Current (Id) at Tc | 236 A | 236 A | 100 A | 14 A | 180 A | 200 A | 130 A |
| Power Dissipation at Tc | 250 W | 250 W | 139 W | 78 W | 200 W | 150 W | 330 W |
| Technology | Trench MOSFET | Trench MOSFET | OptiMOS 5 (Trench) | CoolMOS (Trench) | Trench MOSFET | OptiMOS 7 (Trench) | HEXFET |
| Param Match Percentage | 100% (reference) | 100% | 80% | 70% | 90% | 80% | 70% |
Wichtigste Unterscheidungsmerkmale
- Class-leading 2.2 mΩ RDS(on) at 100 V in PG-HSOF-8-10 (vs. IRFS4227TRLPBF)
- 100 V rating optimized for 48V telecom/server/eMobility (vs. BSC076N04NDATMA1)
- StrongIRFET 2 platform with proven trench technology (vs. IGLR70R270D2SXUMA1)
Designhinweise
Estimated: At 50 A continuous drain current, the IPT022N10NF2SATMA1 dissipates approximately 5.5 W (P = I² × RDS(on) = 50² × 0.0022). The PG-HSOF-8-10 package's thermal resistance junction-to-case (RθJC) is approximately 0.5 C/W, so the junction temperature rise is only 2.75 C above the case. However, junction-to-ambient (RθJA) depends heavily on PCB copper area; with 1 oz copper pour of 1 square inch, RθJA is approximately 50 C/W, resulting in a 275 C rise above ambient. Designers must ensure the PCB copper area is sized to keep junction temperature below 150 C at maximum operating ambient.
Use a Kelvin-source PCB layout to keep the gate drive return current path separate from the main power source current path. Place the gate driver as close as possible to the gate pin (pin 8) and connect the driver ground to the source pad directly under the device, not to a distant ground point. This minimizes source inductance in the gate drive loop, which is critical for high-frequency switching applications. Keep the drain tab copper pour continuous and unbroken to maximize heat spreading.
For the PG-HSOF-8-10 package, the PCB land pattern should follow Infineon's recommended footprint with a large drain pad on the top side or bottom side. Use at least 2 oz copper (70 µm) for the drain tab to handle 250 W of power dissipation at Tc. Multiple thermal vias (0.3 mm diameter, 1 mm pitch) under the drain pad are recommended to transfer heat to inner copper planes. The source pins (1-7) should be connected to a wide copper pour on both top and bottom layers for current spreading and thermal dissipation.
Do not exceed VGS=±20 V absolute maximum; use a 10 V gate drive supply with proper gate-source clamping (e.g., 10 V Zener or TVS diode) for protection. Ensure the gate driver can source and sink sufficient peak current (typically 1-2 A) to quickly charge and discharge the MOSFET's input capacitance. Do not parallel devices without proper gate-source resistor balancing (typically 10-100 Ω in series with each gate) to prevent parasitic oscillations.
Compliance-Informationen
RoHS compliant per Infineon product page. Industrial and automotive grades available separately. Halogen-free per Infineon product family standards.
