IRFZ44NPBF vs IRF530NPBF Vergleich

Detaillierter Direktvergleich von IRFZ44NPBF von Infineon und IRF530NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFZ44NPBF IRF530NPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,65 $0,38
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 49 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 60 A
Gate-to-Source Voltage (VGS) max +/- 20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm 90 mOhm (max, approximate per datasheet)
Total Gate Charge (Qg) 42 nC —
Power Dissipation (PD) at Tc=25C 94 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W —
Betriebs-Sperrschichttemperatur -55C to +175C -55 C to +175 C
Gehäuse TO-220AB (3-pin + tab) —
Montageart Through Hole Through Hole
Technology HEXFET (Advanced Process) —
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] —
RoHS-Status Compliant Compliant
Part Number — IRF530NPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Transistortyp — N-Channel HEXFET Power MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 17 A
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Maximum Power Dissition (Pd) at Tc — 70 W
Gehäuse / Bauform — TO-220AB (through-hole)
Avalanche Rated — Yes
MSL-Level — N/A (through-hole)
Configuration — Single N-channel, 3 pins (Gate, Drain, Source)

Datenblätter & Ressourcen

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