IRFZ44NPBF vs IRF530NPBF 比較
詳細な並列比較: IRFZ44NPBF メーカー: Infineon および IRF530NPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFZ44NPBF | IRF530NPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.65 | $0.38 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 49 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 60 A |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 17.5 mOhm | 90 mOhm (max, approximate per datasheet) |
| Total Gate Charge (Qg) | 42 nC | — |
| Power Dissipation (PD) at Tc=25C | 94 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 62 C/W | — |
| 動作接合温度 | -55C to +175C | -55 C to +175 C |
| パッケージ | TO-220AB (3-pin + tab) | — |
| 実装タイプ | Through Hole | Through Hole |
| Technology | HEXFET (Advanced Process) | — |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS rating] | — |
| RoHS ステータス | Compliant | Compliant |
| Part Number | — | IRF530NPBF |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| トランジスタタイプ | — | N-Channel HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 17 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Maximum Power Dissition (Pd) at Tc | — | 70 W |
| パッケージ / ケース | — | TO-220AB (through-hole) |
| Avalanche Rated | — | Yes |
| MSLレベル | — | N/A (through-hole) |
| Configuration | — | Single N-channel, 3 pins (Gate, Drain, Source) |