IRFZ44NSTRLPBF vs FQP50N06 Vergleich
Detaillierter Direktvergleich von IRFZ44NSTRLPBF von Infineon und FQP50N06 von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFZ44NSTRLPBF | FQP50N06 |
|---|---|---|
| Marke | Infineon | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,93 | $0,58 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) range] |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | [DATA_NEEDED: Qg] |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Betriebstemperaturbereich | -55C to +175C | -55C to +175C (junction) |
| Gehäuse | D2PAK (TO-263) | TO-220-3 (through-hole) |
| Montageart | Surface Mount | Through Hole |
| Technology | HEXFET | Planar Stripe DMOS |
| RoHS-Status | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| Manufacturer | — | onsemi (formerly Fairchild Semiconductor) |
| Part Number | — | FQP50N06 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| Maximum Power Dissipation (PD) at Tc | — | 120 W |
| On-Resistance Rds(on) max at VGS=10V | — | [DATA_NEEDED: Rds(on) max] |
| On-Resistance Rds(on) typical at VGS=10V | — | 0.022 ohm |
| Channel Mode | — | Enhancement |
| Lead-Free | — | Yes |