IRLL024ZTRPBF vs IRLR024NTRPBF Vergleich

Detaillierter Direktvergleich von IRLL024ZTRPBF von Infineon und IRLR024NTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLL024ZTRPBF IRLR024NTRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,46 $0,46
Manufacturer Infineon Technologies (formerly International Rectifier) —
Technology HEXFET Power MOSFET (trench-gate) HEXFET (Advanced Process Technology)
FET Type N-Channel enhancement-mode N-Channel MOSFET, Metal Oxide
Drain-Source Voltage (VDS) max 55 V —
Gate-Source Voltage (VGS) max ±16 V —
Continuous Drain Current (ID) at TC=25°C 5 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V 60 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) —
Total Gate Charge (Qg) typical 7 nC —
Power Dissipation (PD) at TA=25°C 1 W —
Operating Junction Temperature (TJ) -55 °C to +150 °C —
Gehäuse SOT-223 (TO-261-4) TO-252AA (DPAK)
Montageart Surface Mount Surface Mount
MSL-Level 1 (unlimited floor life) 1 (per JEDEC J-STD-020)
RoHS-Status Compliant —
Drain-to-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc=25C — 17 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Rds(on) Max @ Vgs=10V — 65 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.0 V to 2.0 V
Total Gate Charge (Qg) — 10 nC (typical)
Power Dissipation (Pd) at Tc=25C — 45 W
Betriebstemperaturbereich — -55 C to +175 C
Avalanche Rated — Yes (fully avalanche rated)
Gate Drive Level — Logic-Level
Lead-Free / RoHS — Lead-Free / RoHS Compliant

Datenblätter & Ressourcen

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