IRLL024ZTRPBF vs IRLR024NTRPBF 对比
详细并排对比 IRLL024ZTRPBF 出自 Infineon 和 IRLR024NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLL024ZTRPBF | IRLR024NTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.46 | $0.46 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Technology | HEXFET Power MOSFET (trench-gate) | HEXFET (Advanced Process Technology) |
| FET Type | N-Channel enhancement-mode | N-Channel MOSFET, Metal Oxide |
| Drain-Source Voltage (VDS) max | 55 V | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 60 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) | — |
| Total Gate Charge (Qg) typical | 7 nC | — |
| Power Dissipation (PD) at TA=25°C | 1 W | — |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C | — |
| 封装 | SOT-223 (TO-261-4) | TO-252AA (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (unlimited floor life) | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | — |
| Drain-to-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) at Tc=25C | — | 17 A |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Rds(on) Max @ Vgs=10V | — | 65 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.0 V to 2.0 V |
| Total Gate Charge (Qg) | — | 10 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 45 W |
| 工作温度范围 | — | -55 C to +175 C |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Gate Drive Level | — | Logic-Level |
| Lead-Free / RoHS | — | Lead-Free / RoHS Compliant |