IRLML0040TRPBF vs IRF8736TRPBF Vergleich
Detaillierter Direktvergleich von IRLML0040TRPBF von Infineon und IRF8736TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLML0040TRPBF | IRF8736TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,16 | $0,27 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TA=25C | 3.6 A | 18 A |
| Pulsed Drain Current (IDM) | 14 A | — |
| RDS(on) Max at VGS=10V | 56 mOhm | — |
| Gate-to-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Total Gate Charge (Qg) | 2.6 nC | — |
| Power Dissipation (PD) at TA=25C | 1.3 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Technology | IR MOSFET / HEXFET | StrongIRFET / HEXFET |
| Gehäuse | Micro3 (SOT-23) | SO-8 (8-SO, MS-012AA) |
| Montageart | Surface Mount | Surface Mount |
| Qualification Level | Consumer (per JEDEC JSD47F) | — |
| Moisture Sensitivity Level | MSL1 (per IPC/JEDEC J-STD-020D) | — |
| RoHS Compliance | Compliant (no lead, no bromide, no halogen) | — |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Power Dissipation (PD) Max at TA=25C | — | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 4.8 mOhm at VGS = 10V |
| Gate Charge (Qg) Typical | — | 17 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Betriebstemperaturbereich | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes (fully characterized avalanche voltage) |
| Configuration | — | Single |
| Packaging | — | Tape & Reel (TRPBF suffix) |