IRLML0040TRPBF vs IRF8736TRPBF 对比

详细并排对比 IRLML0040TRPBF 出自 Infineon 和 IRF8736TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRLML0040TRPBF IRLML0040TRPBF - 40V N-Ch MOSFET, 56mOhm, 3.6A | Infineon

IRLML0040TRPBF - 40V N-Ch MOSFET, 56mOhm, 3.6A | Infineon

IRLML0040TRPBF ✓ 量产中

规格对比

参数 IRLML0040TRPBF IRF8736TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.16 $0.27
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25C 3.6 A 18 A
Pulsed Drain Current (IDM) 14 A —
RDS(on) Max at VGS=10V 56 mOhm —
Gate-to-Source Voltage (VGS) Max [DATA_NEEDED: VGS maximum rating] —
Total Gate Charge (Qg) 2.6 nC —
Power Dissipation (PD) at TA=25C 1.3 W —
工作结温 -55C to +150C —
Technology IR MOSFET / HEXFET StrongIRFET / HEXFET
封装 Micro3 (SOT-23) SO-8 (8-SO, MS-012AA)
安装类型 Surface Mount Surface Mount
Qualification Level Consumer (per JEDEC JSD47F) —
Moisture Sensitivity Level MSL1 (per IPC/JEDEC J-STD-020D) —
RoHS Compliance Compliant (no lead, no bromide, no halogen) —
Drain-Source Voltage (VDS) Max — 30 V
Power Dissipation (PD) Max at TA=25C — 2.5 W
Drain-Source On-Resistance (RDS(on)) Max — 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical — 17 nC
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
工作温度范围 — -55C to +150C (junction)
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
MSL 等级 — 1 (per JEDEC J-STD-020)
Avalanche Rated — Yes (fully characterized avalanche voltage)
Configuration — Single
Packaging — Tape & Reel (TRPBF suffix)

数据手册与资源

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