IRLML2803TRPBF vs IRLML2030TRPBF Vergleich
Detaillierter Direktvergleich von IRLML2803TRPBF von Infineon und IRLML2030TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLML2803TRPBF | IRLML2030TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,13 | $0,14 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRLML2803TRPBF | IRLML2030TRPBF |
| Transistortyp | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | — |
| Gehäuse | Micro3 / SOT-23 (3-pin) | Micro3 (SOT-23) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (TJ) | — |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | — |
| MSL-Level | 1 | MSL 1 |
| RoHS Compliance | Compliant, Halogen-Free | Yes (lead-free, halogen-free) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 2.7 A |
| Power Dissipation (PD) at Ta | — | 1.3 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 100 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 154 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Charge (Qg) typ | — | 1.0 nC |
| Betriebstemperatur | — | -55C to +150C (junction) |
| Qualification | — | JEDEC standard |
| Soldering | — | Wave-solder compatible |