IRLML2803TRPBF vs IRLML2030TRPBF 对比
详细并排对比 IRLML2803TRPBF 出自 Infineon 和 IRLML2030TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLML2803TRPBF | IRLML2030TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.13 | $0.14 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRLML2803TRPBF | IRLML2030TRPBF |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | — |
| 封装 | Micro3 / SOT-23 (3-pin) | Micro3 (SOT-23) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (TJ) | — |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | — |
| MSL 等级 | 1 | MSL 1 |
| RoHS Compliance | Compliant, Halogen-Free | Yes (lead-free, halogen-free) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 2.7 A |
| Power Dissipation (PD) at Ta | — | 1.3 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 100 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 154 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Charge (Qg) typ | — | 1.0 nC |
| 工作温度 | — | -55C to +150C (junction) |
| Qualification | — | JEDEC standard |
| Soldering | — | Wave-solder compatible |