IRLML2803TRPBF vs IRLML2030TRPBF Comparison
Detailed side-by-side comparison of IRLML2803TRPBF by Infineon and IRLML2030TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML2803TRPBF | IRLML2030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.13 | $0.14 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRLML2803TRPBF | IRLML2030TRPBF |
| Transistor Type | N-Channel MOSFET | β |
| Technology | IR MOSFET Generation V | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | β |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | β |
| Gate Charge (Qg) | 3.3 nC typical | β |
| Power Dissipation (PD) at TA=25C | 540 mW | β |
| Package | Micro3 / SOT-23 (3-pin) | Micro3 (SOT-23) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (TJ) | β |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | β |
| MSL Level | 1 | MSL 1 |
| RoHS Compliance | Compliant, Halogen-Free | Yes (lead-free, halogen-free) |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta | β | 2.7 A |
| Power Dissipation (PD) at Ta | β | 1.3 W |
| On-Resistance RDS(on) max @ VGS=10V | β | 100 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | β | 154 mOhm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Charge (Qg) typ | β | 1.0 nC |
| Operating Temperature | β | -55C to +150C (junction) |
| Qualification | β | JEDEC standard |
| Soldering | β | Wave-solder compatible |