IRLR024NTRLPBF vs IRLR024NTRPBF Vergleich

Detaillierter Direktvergleich von IRLR024NTRLPBF von Infineon und IRLR024NTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLR024NTRLPBF IRLR024NTRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,38 $0,46
Transistor Polarity N-Channel —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 17 A —
On-Resistance RDS(on) max at VGS=10V 65 mΩ —
Gate Threshold Voltage VGS(th) Logic-level (drive from 3.3V/5V logic) —
Total Gate Charge (Qg) 10 nC (typical) 10 nC (typical)
Maximum Power Dissipation (PD) at TC=25C 45 W —
Thermal Resistance Junction-to-Case (RθJC) 3.3 °C/W —
Thermal Resistance Junction-to-Ambient (RθJA) 50 °C/W (PCB mount) —
Avalanche Rating Fully avalanche rated —
Gehäuse TO-252AA (DPAK), 3-pin (2 + tab), Surface Mount TO-252AA (DPAK)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55 °C to +175 °C (junction) -55 C to +175 C
RoHS-Status Compliant —
Lead-Free / Halogen-Free Yes / Yes —
MSL-Level 1 1 (per JEDEC J-STD-020)
Technology HEXFET (cellular N-channel MOSFET) HEXFET (Advanced Process Technology)
FET Type — N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc=25C — 17 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Rds(on) Max @ Vgs=10V — 65 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.0 V to 2.0 V
Power Dissipation (Pd) at Tc=25C — 45 W
Avalanche Rated — Yes (fully avalanche rated)
Gate Drive Level — Logic-Level
Lead-Free / RoHS — Lead-Free / RoHS Compliant

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