IRLR024NTRPBF vs IRLL024ZTRPBF Vergleich

Detaillierter Direktvergleich von IRLR024NTRPBF von Infineon und IRLL024ZTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLR024NTRPBF IRLL024ZTRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,46 $0,46
FET Type N-Channel MOSFET, Metal Oxide N-Channel enhancement-mode
Drain-to-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) at Tc=25C 17 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Rds(on) Max @ Vgs=10V 65 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.0 V to 2.0 V —
Total Gate Charge (Qg) 10 nC (typical) —
Power Dissipation (Pd) at Tc=25C 45 W —
Betriebstemperaturbereich -55 C to +175 C —
Montageart Surface Mount Surface Mount
Gehäuse TO-252AA (DPAK) SOT-223 (TO-261-4)
Technology HEXFET (Advanced Process Technology) HEXFET Power MOSFET (trench-gate)
Avalanche Rated Yes (fully avalanche rated) —
Gate Drive Level Logic-Level —
Lead-Free / RoHS Lead-Free / RoHS Compliant —
MSL-Level 1 (per JEDEC J-STD-020) 1 (unlimited floor life)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Drain-Source Voltage (VDS) max — 55 V
Gate-Source Voltage (VGS) max — ±16 V
Continuous Drain Current (ID) at TC=25°C — 5 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V — 60 mΩ
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO)
Total Gate Charge (Qg) typical — 7 nC
Power Dissipation (PD) at TA=25°C — 1 W
Operating Junction Temperature (TJ) — -55 °C to +150 °C
RoHS-Status — Compliant

Datenblätter & Ressourcen

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