IRLR024NTRPBF vs IRLL024ZTRPBF Comparaison
Comparaison détaillée côte à côte de IRLR024NTRPBF par Infineon et IRLL024ZTRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRLR024NTRPBF | IRLL024ZTRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,46 | $0,46 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel enhancement-mode |
| Drain-to-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Rds(on) Max @ Vgs=10V | 65 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.0 V | — |
| Total Gate Charge (Qg) | 10 nC (typical) | — |
| Power Dissipation (Pd) at Tc=25C | 45 W | — |
| Plage de température de fonctionnement | -55 C to +175 C | — |
| Type de montage | Surface Mount | Surface Mount |
| Boîtier | TO-252AA (DPAK) | SOT-223 (TO-261-4) |
| Technology | HEXFET (Advanced Process Technology) | HEXFET Power MOSFET (trench-gate) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Gate Drive Level | Logic-Level | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| Niveau MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited floor life) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Drain-Source Voltage (VDS) max | — | 55 V |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 60 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| Total Gate Charge (Qg) typical | — | 7 nC |
| Power Dissipation (PD) at TA=25°C | — | 1 W |
| Operating Junction Temperature (TJ) | — | -55 °C to +150 °C |
| Statut RoHS | — | Compliant |