IRLR024NTRPBF vs IRLL024ZTRPBF Comparison
Detailed side-by-side comparison of IRLR024NTRPBF by Infineon and IRLL024ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR024NTRPBF | IRLL024ZTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel enhancement-mode |
| Drain-to-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Rds(on) Max @ Vgs=10V | 65 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.0 V | — |
| Total Gate Charge (Qg) | 10 nC (typical) | — |
| Power Dissipation (Pd) at Tc=25C | 45 W | — |
| Operating Temperature Range | -55 C to +175 C | — |
| Mounting Type | Surface Mount | Surface Mount |
| Package | TO-252AA (DPAK) | SOT-223 (TO-261-4) |
| Technology | HEXFET (Advanced Process Technology) | HEXFET Power MOSFET (trench-gate) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Gate Drive Level | Logic-Level | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited floor life) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Drain-Source Voltage (VDS) max | — | 55 V |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 60 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| Total Gate Charge (Qg) typical | — | 7 nC |
| Power Dissipation (PD) at TA=25°C | — | 1 W |
| Operating Junction Temperature (TJ) | — | -55 °C to +150 °C |
| RoHS Status | — | Compliant |