IRLR024NTRPBF vs IRLL024ZTRPBF Comparison

Detailed side-by-side comparison of IRLR024NTRPBF by Infineon and IRLL024ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR024NTRPBF IRLR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRLR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRLR024NTRPBF βœ“ Active

Specification Comparison

Parameter IRLR024NTRPBF IRLL024ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.46
FET Type N-Channel MOSFET, Metal Oxide N-Channel enhancement-mode
Drain-to-Source Voltage (Vdss) 55 V β€”
Continuous Drain Current (Id) at Tc=25C 17 A β€”
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] β€”
Rds(on) Max @ Vgs=10V 65 mOhm β€”
Gate Threshold Voltage (Vgs(th)) 1.0 V to 2.0 V β€”
Total Gate Charge (Qg) 10 nC (typical) β€”
Power Dissipation (Pd) at Tc=25C 45 W β€”
Operating Temperature Range -55 C to +175 C β€”
Mounting Type Surface Mount Surface Mount
Package TO-252AA (DPAK) SOT-223 (TO-261-4)
Technology HEXFET (Advanced Process Technology) HEXFET Power MOSFET (trench-gate)
Avalanche Rated Yes (fully avalanche rated) β€”
Gate Drive Level Logic-Level β€”
Lead-Free / RoHS Lead-Free / RoHS Compliant β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (unlimited floor life)
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Drain-Source Voltage (VDS) max β€” 55 V
Gate-Source Voltage (VGS) max β€” Β±16 V
Continuous Drain Current (ID) at TC=25Β°C β€” 5 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V β€” 60 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO)
Total Gate Charge (Qg) typical β€” 7 nC
Power Dissipation (PD) at TA=25Β°C β€” 1 W
Operating Junction Temperature (TJ) β€” -55 Β°C to +150 Β°C
RoHS Status β€” Compliant

Datasheets & Resources

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