IRLR024NTRPBF vs IRLR024NTRLPBF Vergleich

Detaillierter Direktvergleich von IRLR024NTRPBF von Infineon und IRLR024NTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLR024NTRPBF IRLR024NTRLPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,46 $0,38
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) at Tc=25C 17 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Rds(on) Max @ Vgs=10V 65 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.0 V to 2.0 V —
Total Gate Charge (Qg) 10 nC (typical) 10 nC (typical)
Power Dissipation (Pd) at Tc=25C 45 W —
Betriebstemperaturbereich -55 C to +175 C -55 °C to +175 °C (junction)
Montageart Surface Mount Surface Mount
Gehäuse TO-252AA (DPAK) TO-252AA (DPAK), 3-pin (2 + tab), Surface Mount
Technology HEXFET (Advanced Process Technology) HEXFET (cellular N-channel MOSFET)
Avalanche Rated Yes (fully avalanche rated) —
Gate Drive Level Logic-Level —
Lead-Free / RoHS Lead-Free / RoHS Compliant —
MSL-Level 1 (per JEDEC J-STD-020) 1
Transistor Polarity — N-Channel
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC=25C — 17 A
On-Resistance RDS(on) max at VGS=10V — 65 mΩ
Gate Threshold Voltage VGS(th) — Logic-level (drive from 3.3V/5V logic)
Maximum Power Dissipation (PD) at TC=25C — 45 W
Thermal Resistance Junction-to-Case (RθJC) — 3.3 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) — 50 °C/W (PCB mount)
Avalanche Rating — Fully avalanche rated
RoHS-Status — Compliant
Lead-Free / Halogen-Free — Yes / Yes

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern