IRLR024NTRPBF vs IRLR024NTRLPBF 비교
다음의 상세 나란히 비교: IRLR024NTRPBF 제조: Infineon 및 IRLR024NTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRLR024NTRPBF | IRLR024NTRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.46 | $0.38 |
| FET Type | N-Channel MOSFET, Metal Oxide | — |
| Drain-to-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Rds(on) Max @ Vgs=10V | 65 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.0 V | — |
| Total Gate Charge (Qg) | 10 nC (typical) | 10 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | 45 W | — |
| 동작 온도 범위 | -55 C to +175 C | -55 °C to +175 °C (junction) |
| 실장 유형 | Surface Mount | Surface Mount |
| 패키지 | TO-252AA (DPAK) | TO-252AA (DPAK), 3-pin (2 + tab), Surface Mount |
| Technology | HEXFET (Advanced Process Technology) | HEXFET (cellular N-channel MOSFET) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Gate Drive Level | Logic-Level | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | 1 |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 65 mΩ |
| Gate Threshold Voltage VGS(th) | — | Logic-level (drive from 3.3V/5V logic) |
| Maximum Power Dissipation (PD) at TC=25C | — | 45 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 3.3 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | — | 50 °C/W (PCB mount) |
| Avalanche Rating | — | Fully avalanche rated |
| RoHS 상태 | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |