IRLR3105TRPBF vs IRLR024NTRPBF Vergleich
Detaillierter Direktvergleich von IRLR3105TRPBF von Infineon und IRLR024NTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLR3105TRPBF | IRLR024NTRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,46 |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | HEXFET (Advanced Process Technology) |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc | 25 A | — |
| Rds(on) max @ VGS=10V | 37 mOhm | — |
| Rds(on) max @ VGS=5V | [DATA_NEEDED: Rds(on) at 5V] | — |
| Total Gate Charge (Qg) | 13.3 nC | 10 nC (typical) |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Input Capacitance (Ciss) | 710 pF @ 25 V | — |
| Power Dissipation (Pd) at Tc | 57 W | — |
| Betriebstemperaturbereich | [DATA_NEEDED: TJ min/max] | -55 C to +175 C |
| Gehäuse | TO-252AA (DPAK, 2 leads + tab) | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Gate Drive Type | Logic-Level | — |
| RoHS-Status | Compliant | — |
| Packaging | Tape & Reel (TRPBF) | — |
| Supplier Device Package | TO-252AA (DPAK) | — |
| Drain-to-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) at Tc=25C | — | 17 A |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Rds(on) Max @ Vgs=10V | — | 65 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.0 V to 2.0 V |
| Power Dissipation (Pd) at Tc=25C | — | 45 W |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Gate Drive Level | — | Logic-Level |
| Lead-Free / RoHS | — | Lead-Free / RoHS Compliant |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |