IRLR3105TRPBF vs IRLR024NTRPBF Comparación
Comparación detallada lado a lado de IRLR3105TRPBF por Infineon y IRLR024NTRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLR3105TRPBF | IRLR024NTRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $0,46 |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | HEXFET (Advanced Process Technology) |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc | 25 A | — |
| Rds(on) max @ VGS=10V | 37 mOhm | — |
| Rds(on) max @ VGS=5V | [DATA_NEEDED: Rds(on) at 5V] | — |
| Total Gate Charge (Qg) | 13.3 nC | 10 nC (typical) |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Input Capacitance (Ciss) | 710 pF @ 25 V | — |
| Power Dissipation (Pd) at Tc | 57 W | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: TJ min/max] | -55 C to +175 C |
| Encapsulado | TO-252AA (DPAK, 2 leads + tab) | TO-252AA (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Gate Drive Type | Logic-Level | — |
| Estado RoHS | Compliant | — |
| Packaging | Tape & Reel (TRPBF) | — |
| Supplier Device Package | TO-252AA (DPAK) | — |
| Drain-to-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) at Tc=25C | — | 17 A |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Rds(on) Max @ Vgs=10V | — | 65 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.0 V to 2.0 V |
| Power Dissipation (Pd) at Tc=25C | — | 45 W |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Gate Drive Level | — | Logic-Level |
| Lead-Free / RoHS | — | Lead-Free / RoHS Compliant |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |