ISC0703NLSATMA1 vs ISC015N04NM5ATMA1 Vergleich

Detaillierter Direktvergleich von ISC0703NLSATMA1 von Infineon und ISC015N04NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ISC0703NLSATMA1 ISC015N04NM5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,51 $0,98
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) at Ta=25C 13 A 33 A
Continuous Drain Current (ID) at Tc=25C 57 A 206 A
Power Dissipation (PD) at Ta=25C 3 W —
Power Dissipation (PD) at Tc=25C 44 W —
Technology Trench MOSFET (OptiMOS family) OptiMOS 5 (trench MOSFET)
Gehäuse PG-TDSON-8 (5x6 mm) —
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55C to +150C (junction) -55 C to +175 C (junction, per OptiMOS 5)
Standard Package Quantity 5,000 (reel) —
MSL-Level [DATA_NEEDED: MSL level] 1 (per Infineon SuperSO8 family)
RoHS-Status Compliant Compliant
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] 3.4 V (typ)
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Avalanche Energy (EAS) [DATA_NEEDED: EAS rating] —
Manufacturer — Infineon Technologies
Series — OptiMOS 5 40V Normal Level
FET Type — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
R_DS(on) max — 1.5 mOhm @ VGS=10 V, ID=50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM rating]
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 115 W
Gehäuse / Bauform — PG-TDSON-8 FL (SuperSO8 5x6 mm)
Pin-Anzahl — 8
Drive Level — Normal Level (VGS(th) ~3.4 V)

Datenblätter & Ressourcen

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