ISC0703NLSATMA1 vs ISC015N04NM5ATMA1 Perbandingan
Perbandingan bersamaan detil ISC0703NLSATMA1 dari Infineon dan ISC015N04NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC0703NLSATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at Ta=25C | 13 A | 33 A |
| Continuous Drain Current (ID) at Tc=25C | 57 A | 206 A |
| Power Dissipation (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 44 W | — |
| Technology | Trench MOSFET (OptiMOS family) | OptiMOS 5 (trench MOSFET) |
| Paket | PG-TDSON-8 (5x6 mm) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55 C to +175 C (junction, per OptiMOS 5) |
| Standard Package Quantity | 5,000 (reel) | — |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (per Infineon SuperSO8 family) |
| Status RoHS | Compliant | Compliant |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | 3.4 V (typ) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 40V Normal Level |
| FET Type | — | N-Channel |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| Paket / Case | — | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Jumlah Pin | — | 8 |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |