ISC0703NLSATMA1 vs ISC015N04NM5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC0703NLSATMA1 disebabkan oleh Infineon dan ISC015N04NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC0703NLSATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at Ta=25C | 13 A | 33 A |
| Continuous Drain Current (ID) at Tc=25C | 57 A | 206 A |
| Power Dissipation (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 44 W | — |
| Technology | Trench MOSFET (OptiMOS family) | OptiMOS 5 (trench MOSFET) |
| Kemasan | PG-TDSON-8 (5x6 mm) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C (junction) | -55 C to +175 C (junction, per OptiMOS 5) |
| Standard Package Quantity | 5,000 (reel) | — |
| Aras MSL | [DATA_NEEDED: MSL level] | 1 (per Infineon SuperSO8 family) |
| Status RoHS | Compliant | Compliant |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | 3.4 V (typ) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 40V Normal Level |
| FET Type | — | N-Channel |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| Kemasan / Case | — | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Kiraan Pin | — | 8 |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |