ISZ028N03LF2SATMA1 vs ISC015N03LF2SATMA1 Perbandingan
Perbandingan bersamaan detil ISZ028N03LF2SATMA1 dari Infineon dan ISC015N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | ISZ028N03LF2SATMA1 | ISC015N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | StrongIRFET 2 (Trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | — |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Paket | PG-TSDSON-8 FL (FL = flat lead) | PG-TDSON-8-62 (TDSON EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (junction, typical) | -55C to +175C |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ 2 (<= 40 V trench) |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 43 A |
| Continuous Drain Current (ID) at TC=25C | — | 214 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.5 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2.35 V |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 125 W |
| Lead-Free | — | Yes |