ISZ173N15NM6ATMA1 vs ISC151N08NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISZ173N15NM6ATMA1 von Infineon und ISC151N08NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISZ173N15NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,18 | $0,78 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 150V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 80 V |
| Continuous Drain Current (ID) at Ta | 7.9 A | — |
| Continuous Drain Current (ID) at Tc | 48 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 94 W | — |
| Technology | OptiMOS 6 trench-gate MOSFET | OptiMOS 6 |
| Gehäuse | PG-TSDSON-8 FL | PG-TDSON-8 FL |
| Montageart | Surface Mount | Surface Mount |
| Operating Mode | Enhancement Mode | — |
| Application | Hard and soft switching, high/low frequency | — |
| Lead-Free | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Tape & Reel Quantity | 5000 | — |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Kontinuierlicher Drain-Strom (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Anzahl der Pins | — | 8 |
| Channel Mode | — | Enhancement |
| Betriebstemperatur | — | -55 °C to +175 °C |