ISZ173N15NM6ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of ISZ173N15NM6ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC151N08NM6ATMA1
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
ISC151N08NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISZ173N15NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $0.78 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 6 150V | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | 80 V |
| Continuous Drain Current (ID) at Ta | 7.9 A | β |
| Continuous Drain Current (ID) at Tc | 48 A | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 94 W | β |
| Technology | OptiMOS 6 trench-gate MOSFET | OptiMOS 6 |
| Package | PG-TSDSON-8 FL | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Mode | Enhancement Mode | β |
| Application | Hard and soft switching, high/low frequency | β |
| Lead-Free | Yes | β |
| RoHS Status | Compliant | Compliant |
| Tape & Reel Quantity | 5000 | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (TA=25Β°C) | β | 9.2 A |
| Continuous Drain Current (TC=25Β°C) | β | 37 A |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 48 W |
| On-Resistance RDS(on) max | β | 15.1 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 3.5 V |
| Number of Pins | β | 8 |
| Channel Mode | β | Enhancement |
| Operating Temperature | β | -55 Β°C to +175 Β°C |