ITS4200SMENHUMA1 vs BSR315PH6327XTSA1 Vergleich

Detaillierter Direktvergleich von ITS4200SMENHUMA1 von Infineon und BSR315PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter ITS4200SMENHUMA1 BSR315PH6327XTSA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,05 $0,22
Product Type Smart High-Side Power Switch —
Topologie N-Channel MOSFET, High-Side —
Nominal Load Current 0.7 A —
On-State Resistance (Ron) [DATA_NEEDED: Ron typ/max] —
Operating Voltage Range 5 V to 41 V —
Overvoltage Protection (Load Dump) 41 V —
Input Logic Level CMOS-compatible —
Short-Circuit Protection Yes (current limitation) —
Thermisches Abschalten Yes (with restart) —
Undervoltage Shutdown Yes —
Open-Load Detection Yes (OFF-state diagnostic) —
Status / Diagnostic Output Yes —
Quiescent Current (standby) [DATA_NEEDED: Iq typ] —
Betriebstemperaturbereich -40 C to +125 C (industrial) -55 C to +150 C (TJ)
Gehäuse SOT-223-4 (PG-SOT223-4) PG-SC59-3 / SOT-23-3
Montageart Surface Mount Surface Mount
Family PROFET™ Industrial —
Channel Count 1 —
RoHS-Status Compliant Compliant
Automotive Qualified No (industrial grade only) Yes (per Infineon product family marking)
Manufacturer — Infineon Technologies
Part Number — BSR315PH6327XTSA1
Series — OptiMOS P-Channel
FET Type — P-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -620 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-State Resistance (RDS(on)) — 800 mOhm @ -620 mA, -10 V
Gate Threshold Voltage (VGS(th)) — ±20 V (max VGS)
Input Capacitance (Ciss) — 176 pF @ 25 V
Total Gate Charge (Qg) — 6 nC @ 10 V
Pin-Anzahl — 3
Packaging — Tape & Reel (TR)

Datenblätter & Ressourcen

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