ITS4200SMENHUMA1 vs BSR315PH6327XTSA1 Comparison

Detailed side-by-side comparison of ITS4200SMENHUMA1 by Infineon and BSR315PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ITS4200SMENHUMA1 ITS4200SMENHUMA1 - 700mA 41V Smart High-Side Switch | Infineon

ITS4200SMENHUMA1 - 700mA 41V Smart High-Side Switch | Infineon

ITS4200SMENHUMA1 βœ“ Active
Infineon
BSR315PH6327XTSA1 BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon

BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon

BSR315PH6327XTSA1 βœ“ Active

Specification Comparison

Parameter ITS4200SMENHUMA1 BSR315PH6327XTSA1
Brand Infineon Infineon
Category Power MOSFET Drivers MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.22
Product Type Smart High-Side Power Switch β€”
Topology N-Channel MOSFET, High-Side β€”
Nominal Load Current 0.7 A β€”
On-State Resistance (Ron) [DATA_NEEDED: Ron typ/max] β€”
Operating Voltage Range 5 V to 41 V β€”
Overvoltage Protection (Load Dump) 41 V β€”
Input Logic Level CMOS-compatible β€”
Short-Circuit Protection Yes (current limitation) β€”
Thermal Shutdown Yes (with restart) β€”
Undervoltage Shutdown Yes β€”
Open-Load Detection Yes (OFF-state diagnostic) β€”
Status / Diagnostic Output Yes β€”
Quiescent Current (standby) [DATA_NEEDED: Iq typ] β€”
Operating Temperature Range -40 C to +125 C (industrial) -55 C to +150 C (TJ)
Package SOT-223-4 (PG-SOT223-4) PG-SC59-3 / SOT-23-3
Mounting Type Surface Mount Surface Mount
Family PROFETβ„’ Industrial β€”
Channel Count 1 β€”
RoHS Status Compliant Compliant
Automotive Qualified No (industrial grade only) Yes (per Infineon product family marking)
Manufacturer β€” Infineon Technologies
Part Number β€” BSR315PH6327XTSA1
Series β€” OptiMOS P-Channel
FET Type β€” P-Channel, Enhancement Mode
Drain-Source Voltage (VDS) β€” -60 V
Continuous Drain Current (ID) β€” -620 mA (Ta)
Power Dissipation (PD) β€” 500 mW (Ta)
On-State Resistance (RDS(on)) β€” 800 mOhm @ -620 mA, -10 V
Gate Threshold Voltage (VGS(th)) β€” Β±20 V (max VGS)
Input Capacitance (Ciss) β€” 176 pF @ 25 V
Total Gate Charge (Qg) β€” 6 nC @ 10 V
Pin Count β€” 3
Packaging β€” Tape & Reel (TR)

Datasheets & Resources

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