ITS4200SMENHUMA1 vs BSR315PH6327XTSA1 Comparación
Comparación detallada lado a lado de ITS4200SMENHUMA1 por Infineon y BSR315PH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | ITS4200SMENHUMA1 | BSR315PH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,05 | $0,22 |
| Product Type | Smart High-Side Power Switch | — |
| Topología | N-Channel MOSFET, High-Side | — |
| Nominal Load Current | 0.7 A | — |
| On-State Resistance (Ron) | [DATA_NEEDED: Ron typ/max] | — |
| Operating Voltage Range | 5 V to 41 V | — |
| Overvoltage Protection (Load Dump) | 41 V | — |
| Input Logic Level | CMOS-compatible | — |
| Short-Circuit Protection | Yes (current limitation) | — |
| Apagado térmico | Yes (with restart) | — |
| Undervoltage Shutdown | Yes | — |
| Open-Load Detection | Yes (OFF-state diagnostic) | — |
| Status / Diagnostic Output | Yes | — |
| Quiescent Current (standby) | [DATA_NEEDED: Iq typ] | — |
| Rango de temperatura de funcionamiento | -40 C to +125 C (industrial) | -55 C to +150 C (TJ) |
| Encapsulado | SOT-223-4 (PG-SOT223-4) | PG-SC59-3 / SOT-23-3 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Family | PROFET™ Industrial | — |
| Channel Count | 1 | — |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualified | No (industrial grade only) | Yes (per Infineon product family marking) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR315PH6327XTSA1 |
| Series | — | OptiMOS P-Channel |
| FET Type | — | P-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -620 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 800 mOhm @ -620 mA, -10 V |
| Gate Threshold Voltage (VGS(th)) | — | ±20 V (max VGS) |
| Input Capacitance (Ciss) | — | 176 pF @ 25 V |
| Total Gate Charge (Qg) | — | 6 nC @ 10 V |
| Recuento de pines | — | 3 |
| Packaging | — | Tape & Reel (TR) |