ITS4200SMENHUMA1 vs BSR315PH6327XTSA1 비교

다음의 상세 나란히 비교: ITS4200SMENHUMA1 제조: Infineon 및 BSR315PH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSR315PH6327XTSA1 BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon

BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon

BSR315PH6327XTSA1 ✓ 활성

사양 비교

파라미터 ITS4200SMENHUMA1 BSR315PH6327XTSA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.05 $0.22
Product Type Smart High-Side Power Switch —
토폴로지 N-Channel MOSFET, High-Side —
Nominal Load Current 0.7 A —
On-State Resistance (Ron) [DATA_NEEDED: Ron typ/max] —
Operating Voltage Range 5 V to 41 V —
Overvoltage Protection (Load Dump) 41 V —
Input Logic Level CMOS-compatible —
Short-Circuit Protection Yes (current limitation) —
열 차단 Yes (with restart) —
Undervoltage Shutdown Yes —
Open-Load Detection Yes (OFF-state diagnostic) —
Status / Diagnostic Output Yes —
Quiescent Current (standby) [DATA_NEEDED: Iq typ] —
동작 온도 범위 -40 C to +125 C (industrial) -55 C to +150 C (TJ)
패키지 SOT-223-4 (PG-SOT223-4) PG-SC59-3 / SOT-23-3
실장 유형 Surface Mount Surface Mount
Family PROFET™ Industrial —
Channel Count 1 —
RoHS 상태 Compliant Compliant
Automotive Qualified No (industrial grade only) Yes (per Infineon product family marking)
Manufacturer — Infineon Technologies
Part Number — BSR315PH6327XTSA1
Series — OptiMOS P-Channel
FET Type — P-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -620 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-State Resistance (RDS(on)) — 800 mOhm @ -620 mA, -10 V
Gate Threshold Voltage (VGS(th)) — ±20 V (max VGS)
Input Capacitance (Ciss) — 176 pF @ 25 V
Total Gate Charge (Qg) — 6 nC @ 10 V
핀 수 — 3
Packaging — Tape & Reel (TR)

데이터시트 & 자료

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