K3LK2K20CM-JFCP vs K3LK4K40CM-BGCP Vergleich
Detaillierter Direktvergleich von K3LK2K20CM-JFCP von Samsung Electronics und K3LK4K40CM-BGCP von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3LK2K20CM-JFCP | K3LK4K40CM-BGCP |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $37,80 |
| Speichertyp | LPDDR5 SDRAM | LPDDR5 SDRAM |
| Density | 48 Gbit (6 GB) | 96 Gb (12 GB) |
| Speed Grade | LPDDR5-5500 | — |
| Max Pin Speed (LPDDR5 family) | 6400 Mbps | — |
| Gehäuse | 441-ball FBGA | 496-ball FBGA |
| Speicherorganisation | [DATA_NEEDED: organization] | 1536M x 64 |
| Supply Voltage VDD | [DATA_NEEDED: VDD voltage] | — |
| Supply Voltage VDDQ | [DATA_NEEDED: VDDQ voltage] | — |
| Schnittstelle | LPDDR5 (JEDEC low-power DRAM) | LPDDR5 (JEDEC) |
| Aggregate Transfer Rate (family max) | 51.2 Gb/s | — |
| Power Saving vs LPDDR4X | up to 20% | — |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Place of Origin (distributor listing) | Johor, Malaysia | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Application Domain | Mobile / Edge AI / Automotive memory | — |
| Datenrate | — | 6400 Mbps per pin |
| Supply Voltage (VDD) | — | 1.05 V |
| Access Time / CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Refresh Scheme | — | Per-bank / all-bank refresh |
| Power-Down Modes | — | Deep sleep / power-down supported |
| Application Segment | — | Mobile, embedded, computing modules |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |