K3LK4K40CM-BGCP vs K3LK8K80CM-MFCP Vergleich
Detaillierter Direktvergleich von K3LK4K40CM-BGCP von Samsung Electronics und K3LK8K80CM-MFCP von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3LK4K40CM-BGCP | K3LK8K80CM-MFCP |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $37,80 | $0,00 |
| Speichertyp | LPDDR5 SDRAM | LPDDR5 SDRAM |
| Density | 96 Gb (12 GB) | 48 Gbit (6 GB) |
| Speicherorganisation | 1536M x 64 | [DATA_NEEDED: organization (x width)] |
| Datenrate | 6400 Mbps per pin | — |
| Supply Voltage (VDD) | 1.05 V | — |
| Gehäuse | 496-ball FBGA | 315-ball FBGA (MFCP) |
| Montageart | Surface Mount | Surface Mount |
| Schnittstelle | LPDDR5 (JEDEC) | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | -40 C to +105 C (automotive-grade) |
| Access Time / CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Refresh Scheme | Per-bank / all-bank refresh | — |
| Power-Down Modes | Deep sleep / power-down supported | — |
| Application Segment | Mobile, embedded, computing modules | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | unknown |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| Pin Speed | — | 6400 Mbps |
| Data Rate (package) | — | 51.2 GB/s (family max) |
| Ball Count | — | 315 |
| Versorgungsspannung | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Power Saving vs LPDDR4X | — | Approximately 20% |
| Generation | — | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | — | Automotive-grade storage chip |
| Place of Origin | — | Johor, Malaysia |