K3LK4K40CM-BGCP vs K3LK8K80CM-MFCP 对比
详细并排对比 K3LK4K40CM-BGCP 出自 Samsung Electronics 和 K3LK8K80CM-MFCP 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3LK4K40CM-BGCP | K3LK8K80CM-MFCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $37.80 | $0.00 |
| 存储器类型 | LPDDR5 SDRAM | LPDDR5 SDRAM |
| Density | 96 Gb (12 GB) | 48 Gbit (6 GB) |
| 存储组织 | 1536M x 64 | [DATA_NEEDED: organization (x width)] |
| 数据速率 | 6400 Mbps per pin | — |
| Supply Voltage (VDD) | 1.05 V | — |
| 封装 | 496-ball FBGA | 315-ball FBGA (MFCP) |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | LPDDR5 (JEDEC) | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| 工作温度 | [DATA_NEEDED: Operating Temperature] | -40 C to +105 C (automotive-grade) |
| Access Time / CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Refresh Scheme | Per-bank / all-bank refresh | — |
| Power-Down Modes | Deep sleep / power-down supported | — |
| Application Segment | Mobile, embedded, computing modules | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | unknown |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| Pin Speed | — | 6400 Mbps |
| Data Rate (package) | — | 51.2 GB/s (family max) |
| Ball Count | — | 315 |
| 电源电压 | — | [DATA_NEEDED: VDD/VDDQ voltage] |
| Power Saving vs LPDDR4X | — | Approximately 20% |
| Generation | — | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | — | Automotive-grade storage chip |
| Place of Origin | — | Johor, Malaysia |