K3LK4L40DM-BGCT vs K3KL1L10GM-JGCT Vergleich
Detaillierter Direktvergleich von K3LK4L40DM-BGCT von Samsung Electronics und K3KL1L10GM-JGCT von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ Aktiv
Spezifikationsvergleich
| Parameter | K3LK4L40DM-BGCT | K3KL1L10GM-JGCT |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $40,50 | $30,90 |
| Speichertyp | DRAM (SDRAM component) | LPDDR5X DRAM (SDRAM) |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 32 Gb (4 GB) |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Datenrate | [DATA_NEEDED: Data Rate] | LPDDR5X-7500 (up to 7500 MT/s) |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Montageart | Surface Mount | Surface Mount (soldered-down BGA) |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | [DATA_NEEDED: refresh specification] |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | unknown |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| MSL-Level | [DATA_NEEDED: Moisture Sensitivity Level] | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Interface Organization | — | x64 |
| Generation | — | LPDDR5X (premium low-power DRAM) |
| Speed vs Previous Generation | — | Up to 1.25x faster than LPDDR5 |
| Power Efficiency vs Previous Generation | — | Approximately 25% better than LPDDR5 |
| Gehäuse | — | 441-ball FBGA |
| Application Class | — | AI edge devices, in-vehicle devices, flagship mobile |
| Versorgungsspannung | — | [DATA_NEEDED: VDD/VDDQ supply voltage] |
| Access Latency | — | [DATA_NEEDED: CAS latency / tRCD / tRP timings] |