K3LK4L40DM-BGCT vs K3KL1L10GM-JGCT Comparação

Comparação detalhada lado a lado de K3LK4L40DM-BGCT por Samsung Electronics e K3KL1L10GM-JGCT por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Samsung Electronics
K3LK4L40DM-BGCT K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics

K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics

K3LK4L40DM-BGCT ✓ Ativo
Samsung Electronics
K3KL1L10GM-JGCT K3KL1L10GM-JGCT - 32Gb LPDDR5X-7500 DRAM | Samsung

K3KL1L10GM-JGCT - 32Gb LPDDR5X-7500 DRAM | Samsung

K3KL1L10GM-JGCT ✓ Ativo

Comparação de especificações

Parâmetro K3LK4L40DM-BGCT K3KL1L10GM-JGCT
Marca Samsung Electronics Samsung Electronics
Categoria DRAM DRAM
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $40,50 $30,90
Tipo de memória DRAM (SDRAM component) LPDDR5X DRAM (SDRAM)
Manufacturer Samsung Electronics —
Density [DATA_NEEDED: Density] 32 Gb (4 GB)
Organization (x-width) [DATA_NEEDED: Organization] —
Taxa de dados [DATA_NEEDED: Data Rate] LPDDR5X-7500 (up to 7500 MT/s)
Supply Voltage Class [DATA_NEEDED: Supply Voltage] —
Latência CAS [DATA_NEEDED: CAS Latency] —
Package Type BGA (per -BGC ordering-code suffix) —
Package Ball Count [DATA_NEEDED: Ball Count] —
Tipo de montagem Surface Mount Surface Mount (soldered-down BGA)
Temperatura de operação [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: operating temperature range]
Refresh Rate [DATA_NEEDED: Refresh Interval] [DATA_NEEDED: refresh specification]
Status RoHS [DATA_NEEDED: RoHS Status] unknown
Lead Free [DATA_NEEDED: Lead-Free Status] —
Nível MSL [DATA_NEEDED: Moisture Sensitivity Level] [DATA_NEEDED: moisture sensitivity level]
Packaging Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] —
Interface Organization — x64
Generation — LPDDR5X (premium low-power DRAM)
Speed vs Previous Generation — Up to 1.25x faster than LPDDR5
Power Efficiency vs Previous Generation — Approximately 25% better than LPDDR5
Encapsulamento — 441-ball FBGA
Application Class — AI edge devices, in-vehicle devices, flagship mobile
Tensão de alimentação — [DATA_NEEDED: VDD/VDDQ supply voltage]
Access Latency — [DATA_NEEDED: CAS latency / tRCD / tRP timings]

Fichas técnicas e recursos

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