K3LK4L40DM-BGCT vs K3KL1L10GM-JGCT Comparaison
Comparaison détaillée côte à côte de K3LK4L40DM-BGCT par Samsung Electronics et K3KL1L10GM-JGCT par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ Actif
Comparaison des spécifications
| Paramètre | K3LK4L40DM-BGCT | K3KL1L10GM-JGCT |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | DRAM | DRAM |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $40,50 | $30,90 |
| Type de mémoire | DRAM (SDRAM component) | LPDDR5X DRAM (SDRAM) |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 32 Gb (4 GB) |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Débit de données | [DATA_NEEDED: Data Rate] | LPDDR5X-7500 (up to 7500 MT/s) |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| Latence CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Type de montage | Surface Mount | Surface Mount (soldered-down BGA) |
| Température de fonctionnement | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | [DATA_NEEDED: refresh specification] |
| Statut RoHS | [DATA_NEEDED: RoHS Status] | unknown |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Niveau MSL | [DATA_NEEDED: Moisture Sensitivity Level] | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Interface Organization | — | x64 |
| Generation | — | LPDDR5X (premium low-power DRAM) |
| Speed vs Previous Generation | — | Up to 1.25x faster than LPDDR5 |
| Power Efficiency vs Previous Generation | — | Approximately 25% better than LPDDR5 |
| Boîtier | — | 441-ball FBGA |
| Application Class | — | AI edge devices, in-vehicle devices, flagship mobile |
| Tension d'alimentation | — | [DATA_NEEDED: VDD/VDDQ supply voltage] |
| Access Latency | — | [DATA_NEEDED: CAS latency / tRCD / tRP timings] |