K3LK4L40DM-BGCT vs K3KL1L10GM-JGCT 对比

详细并排对比 K3LK4L40DM-BGCT 出自 Samsung Electronics 和 K3KL1L10GM-JGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K3LK4L40DM-BGCT K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics

K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics

K3LK4L40DM-BGCT ✓ 量产中
Samsung Electronics
K3KL1L10GM-JGCT K3KL1L10GM-JGCT - 32Gb LPDDR5X-7500 DRAM | Samsung

K3KL1L10GM-JGCT - 32Gb LPDDR5X-7500 DRAM | Samsung

K3KL1L10GM-JGCT ✓ 量产中

规格对比

参数 K3LK4L40DM-BGCT K3KL1L10GM-JGCT
品牌 Samsung Electronics Samsung Electronics
分类 DRAM DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $40.50 $30.90
存储器类型 DRAM (SDRAM component) LPDDR5X DRAM (SDRAM)
Manufacturer Samsung Electronics —
Density [DATA_NEEDED: Density] 32 Gb (4 GB)
Organization (x-width) [DATA_NEEDED: Organization] —
数据速率 [DATA_NEEDED: Data Rate] LPDDR5X-7500 (up to 7500 MT/s)
Supply Voltage Class [DATA_NEEDED: Supply Voltage] —
CAS 延迟 [DATA_NEEDED: CAS Latency] —
Package Type BGA (per -BGC ordering-code suffix) —
Package Ball Count [DATA_NEEDED: Ball Count] —
安装类型 Surface Mount Surface Mount (soldered-down BGA)
工作温度 [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: operating temperature range]
Refresh Rate [DATA_NEEDED: Refresh Interval] [DATA_NEEDED: refresh specification]
RoHS 状态 [DATA_NEEDED: RoHS Status] unknown
Lead Free [DATA_NEEDED: Lead-Free Status] —
MSL 等级 [DATA_NEEDED: Moisture Sensitivity Level] [DATA_NEEDED: moisture sensitivity level]
Packaging Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] —
Interface Organization — x64
Generation — LPDDR5X (premium low-power DRAM)
Speed vs Previous Generation — Up to 1.25x faster than LPDDR5
Power Efficiency vs Previous Generation — Approximately 25% better than LPDDR5
封装 — 441-ball FBGA
Application Class — AI edge devices, in-vehicle devices, flagship mobile
电源电压 — [DATA_NEEDED: VDD/VDDQ supply voltage]
Access Latency — [DATA_NEEDED: CAS latency / tRCD / tRP timings]

数据手册与资源

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