K4A4G085WG-BCWE vs K4A4G085WD Vergleich
Detaillierter Direktvergleich von K4A4G085WG-BCWE von Samsung Electronics und K4A4G085WD von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A4G085WG-BCWE | K4A4G085WD |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,68 | $2,05 |
| Speichertyp | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| Speichergröße | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Datenrate | 3200 Mbps/pin | Up to 2400 Mbps (speed-grade dependent) |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Technology | D-die DDR4 | — |
| Gehäuse | FBGA-78 (BCW) | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Schnittstelle | Parallel (DDR4) | — |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: refresh rate specification] | [DATA_NEEDED: refresh interval] |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Die Generation | — | D-die |
| Density | — | 4 Gb |
| Speicherorganisation | — | 512M x 8 |
| Speed Grade (example) | — | -BCPB (DDR4-2400), -BCRC |
| Schnittstellentyp | — | DDR4 (double data rate, source-synchronous) |
| Bank Group Architecture | — | Yes (DDR4 bank groups) |
| ODT | — | On-Die Termination (built-in) |
| CAS Latency (typical) | — | [DATA_NEEDED: CL per speed grade] |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |