K4A4G085WG-BCWE vs K4A4G085WD 对比
详细并排对比 K4A4G085WG-BCWE 出自 Samsung Electronics 和 K4A4G085WD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G085WG-BCWE | K4A4G085WD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.68 | $2.05 |
| 存储器类型 | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| 存储容量 | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| 数据速率 | 3200 Mbps/pin | Up to 2400 Mbps (speed-grade dependent) |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Technology | D-die DDR4 | — |
| 封装 | FBGA-78 (BCW) | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | Parallel (DDR4) | — |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: refresh rate specification] | [DATA_NEEDED: refresh interval] |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Die Generation | — | D-die |
| Density | — | 4 Gb |
| 存储组织 | — | 512M x 8 |
| Speed Grade (example) | — | -BCPB (DDR4-2400), -BCRC |
| 接口类型 | — | DDR4 (double data rate, source-synchronous) |
| Bank Group Architecture | — | Yes (DDR4 bank groups) |
| ODT | — | On-Die Termination (built-in) |
| CAS Latency (typical) | — | [DATA_NEEDED: CL per speed grade] |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |