K4A4G085WG-BCWE vs K4A4G085WD Comparación
Comparación detallada lado a lado de K4A4G085WG-BCWE por Samsung Electronics y K4A4G085WD por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | K4A4G085WG-BCWE | K4A4G085WD |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,68 | $2,05 |
| Tipo de memoria | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| Tamaño de memoria | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Velocidad de datos | 3200 Mbps/pin | Up to 2400 Mbps (speed-grade dependent) |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Technology | D-die DDR4 | — |
| Encapsulado | FBGA-78 (BCW) | 78-ball FBGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Interfaz | Parallel (DDR4) | — |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: refresh rate specification] | [DATA_NEEDED: refresh interval] |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Die Generation | — | D-die |
| Density | — | 4 Gb |
| Organización de memoria | — | 512M x 8 |
| Speed Grade (example) | — | -BCPB (DDR4-2400), -BCRC |
| Tipo de interfaz | — | DDR4 (double data rate, source-synchronous) |
| Bank Group Architecture | — | Yes (DDR4 bank groups) |
| ODT | — | On-Die Termination (built-in) |
| CAS Latency (typical) | — | [DATA_NEEDED: CL per speed grade] |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |