K4A8G085WB-BCRC vs K4A8G085WB Vergleich
Detaillierter Direktvergleich von K4A8G085WB-BCRC von Samsung Electronics und K4A8G085WB von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ AktivSpezifikationsvergleich
| Parameter | K4A8G085WB-BCRC | K4A8G085WB |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,80 | $5,20 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gbit |
| Speicherorganisation | 1G x 8 | 1G x 8 |
| Datenrate | 2400 Mbps | [DATA_NEEDED: speed grade data rate in Mbps] |
| Versorgungsspannung | 1.2 V | 1.2 V |
| Betriebstemperatur | 0°C to 85°C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 78-ball FBGA | 78-pin FBGA |
| Number of Terminals | 78 | — |
| Refresh Cycles | 8192 | — |
| Access Time | 0.175 ns | — |
| Technology | CMOS | — |
| Burst Length | 8 and 4 | — |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Montageart | — | Surface Mount |
| Operating Mode | — | DLL Enabled mode (per datasheet) |
| Speed Grade Suffixes | — | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) |
| tCL/cas latency | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | [DATA_NEEDED: refresh rate 1x/2x] |
| Bank Groups | — | [DATA_NEEDED: bank/bank group count] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |
| Termination Voltage (VTT) | — | [DATA_NEEDED: VTT value] |