K4A8G085WB-BCRC vs K4A8G085WB 对比

详细并排对比 K4A8G085WB-BCRC 出自 Samsung Electronics 和 K4A8G085WB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4A8G085WB-BCRC K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung

K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung

K4A8G085WB-BCRC ✓ 量产中
Samsung Electronics
K4A8G085WB K4A8G085WB - 8Gb B-die DDR4 SDRAM 1Gx8 | Samsung

K4A8G085WB - 8Gb B-die DDR4 SDRAM 1Gx8 | Samsung

K4A8G085WB ✓ 量产中

规格对比

参数 K4A8G085WB-BCRC K4A8G085WB
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.80 $5.20
存储器类型 DDR4 SDRAM DDR4 SDRAM (B-die)
Density 8 Gb 8 Gbit
存储组织 1G x 8 1G x 8
数据速率 2400 Mbps [DATA_NEEDED: speed grade data rate in Mbps]
电源电压 1.2 V 1.2 V
工作温度 0°C to 85°C [DATA_NEEDED: operating temperature range]
封装 78-ball FBGA 78-pin FBGA
Number of Terminals 78 —
Refresh Cycles 8192 —
Access Time 0.175 ns —
Technology CMOS —
Burst Length 8 and 4 —
On-Die Termination Yes —
Auto-Refresh Yes —
Self-Refresh Yes —
RoHS Compliant —
安装类型 — Surface Mount
Operating Mode — DLL Enabled mode (per datasheet)
Speed Grade Suffixes — -BCRC, -BIRC, -BCTD, -BCPB (per family naming)
tCL/cas latency — [DATA_NEEDED: CAS latency]
Refresh — [DATA_NEEDED: refresh rate 1x/2x]
Bank Groups — [DATA_NEEDED: bank/bank group count]
Package Dimensions — [DATA_NEEDED: package dimensions]
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]
RoHS 状态 — [DATA_NEEDED: RoHS status]
Termination Voltage (VTT) — [DATA_NEEDED: VTT value]

数据手册与资源

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