K4A8G085WC-BCWE vs H5AN8G8NCJR-VKC Vergleich
Detaillierter Direktvergleich von K4A8G085WC-BCWE von Samsung Electronics und H5AN8G8NCJR-VKC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A8G085WC-BCWE | H5AN8G8NCJR-VKC |
|---|---|---|
| Marke | Samsung Electronics | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $7,38 | $28,13 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM (volatile) |
| Density | 8 Gb | — |
| Speicherorganisation | 1G x 8 | — |
| Datenrate | 3200 Mbps (DDR4-3200) | 2666 Mbps/pin |
| Versorgungsspannung | 1.2 V | — |
| Betriebstemperatur | 0C to +85C | 0C to +85C |
| Gehäuse | 78FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| Montageart | Surface Mount | Surface Mount |
| Schnittstelle | DDR4 (parallel, double data rate) | Parallel (DDR4) |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | — |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| RoHS-Status | Compliant (per JLCPCB listing) | Compliant |
| Refresh | Standard DDR4 refresh mechanisms | — |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Speichergröße | — | 8 Gbit |
| Memory Organization | — | 1G x 8 |
| Clock Frequency | — | 1.6 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V (1.2 V class) |
| Operating Current (typ) | — | 30 mA |
| Standby Current (typ) | — | 3 mA |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| CAS-Latenz | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh period] |