K4A8G085WC-BCWE vs H5AN8G8NCJR-VKC 对比
详细并排对比 K4A8G085WC-BCWE 出自 Samsung Electronics 和 H5AN8G8NCJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WC-BCWE | H5AN8G8NCJR-VKC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.38 | $28.13 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (volatile) |
| Density | 8 Gb | — |
| 存储组织 | 1G x 8 | — |
| 数据速率 | 3200 Mbps (DDR4-3200) | 2666 Mbps/pin |
| 电源电压 | 1.2 V | — |
| 工作温度 | 0C to +85C | 0C to +85C |
| 封装 | 78FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | DDR4 (parallel, double data rate) | Parallel (DDR4) |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | — |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| RoHS 状态 | Compliant (per JLCPCB listing) | Compliant |
| Refresh | Standard DDR4 refresh mechanisms | — |
| On-Die Termination | Yes (DDR4 ODT) | — |
| 存储容量 | — | 8 Gbit |
| Memory Organization | — | 1G x 8 |
| Clock Frequency | — | 1.6 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V (1.2 V class) |
| Operating Current (typ) | — | 30 mA |
| Standby Current (typ) | — | 3 mA |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh period] |