K4A8G085WC vs K4A8G085WB-BCPB Vergleich
Detaillierter Direktvergleich von K4A8G085WC von Samsung Electronics und K4A8G085WB-BCPB von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC ✓ Aktiv
Spezifikationsvergleich
| Parameter | K4A8G085WC | K4A8G085WB-BCPB |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $24,90 | $13,78 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Speicherorganisation | 1G x 8 | 1G x 8 |
| Speed | 2666 Mbps/pin (DDR4-2666) | — |
| Versorgungsspannung | 1.2 V | 1.2 V (nominal) |
| Supply Voltage Range | 1.14 V to 1.26 V | — |
| Clock Frequency | 1333 MHz (1333.333 GHz nominal, per web data) | — |
| Operating Temperature (K4A8G085WC-BITD) | -40 C to +95 C | — |
| Operating Temperature (K4A8G085WC-BCTD) | 0 C to +95 C | — |
| Gehäuse | 78-ball FBGA (78FBGA) | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Data Mask (DM) | Yes | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Datenrate | — | 3200 Mbps (PC4-25600) |
| Speed Grade | — | BC |
| CAS Latency (CL) | — | 22 |
| Burst Length | — | 8 |
| Bank Architecture | — | 16 banks (4 bank groups) |
| Refresh Interval | — | 7.8 us (up to 85C) |
| Schnittstellentyp | — | SSTL-12 |
| Termination | — | ODT / dynamic ODT |
| Self-Refresh | — | Temperature-Compensated Self-Refresh (TCSR) |
| Package Dimensions | — | 11 mm x 11 mm |
| Operating Mode | — | DLL enabled |